2016.05至今,副教授, william威廉官网 2013-2015,博士后,新加坡南洋理工大学(Nanyang Technological University, Singapore) 2010-2013,博 士,日本冈山大学(Okayama University, Japan) 2007-2010,硕士研究生,william威廉官网 (Shaanxi Normal University) Tel: +86-(0)29-81530762 E-mail: xxhe@snnu.edu.cn 办公室: 致知楼 2409 实验室: 致知楼 2432/2431 |
1.二维层状材料的设计、制备以及功能化。
2.二维层状纳米材料的结构调控、光电以及储能性能研究。
承担项目:
主持国家自然科学基金青年项目
主持william威廉官网引进人才科研启动基本资金项目
主持william威廉官网中央高校基本科研业务费专项资金项目
主持陕西省科协青年托举人才项目
代表性文章列表:
Trisulfide bonds acenes for organic battery. Angew. Chem. Int. Ed., doi:10.1002/anie.201906301 (2019). Just accepted.
SnS2 hollow spheres: template-free synthesis and growth mechanism. Physica Status Solidi, 216, 1900185 (2019).
Organic-Inorganic hybrid perovskite single crystals: crystallization, structure, and bandgap engineering, ChemNanoMat, 5, 278 – 289 (2019).
Solvothermal-assisted liquid-phase exfoliation of large size and high quality black phosphorus. Journal of Materiomics, 4, 129-134 (2018).
Production methods of van der Waals heterostructures based on transition metal dichalcogenides. Crystals 8, 35 (2018).
Recent advances in ternary two-dimensional materials: synthesis, properties and applications. J. Mater. Chem. A, 5, 22855 (2017).
MoS2/Rubrene van der Waals Heterostructure: towards ambipolar field-effect transistors and inverter circuits. Small. 13, 1602558 (2017).
Highly sensitive detection of polarized light using anistropic two-dimensional ReS2. Advanced Functional Materials. 26, 1169–1177 (2016).
Optoelectronic properties of atomically thin ReSSe with weak interlayer coupling, Nanoscale, 6, 24105 (2016).
Subatomic deformation driven by vertical piezoelectricity from CdS ultrathin films. Science Advance 2, e1600209 (2016).
Chemical vapor deposition of high-quality and atomically layered ReS2, Small, 11, 5423–5429 (2015).
Van der Waals p-n junction based on organic-inorganic heterostructure, Advanced Functional Materials, 25, 5865–5871 (2015).
Electric-double-layer transistors based on two dimensional materials. ACTA CHIMICA SINICA. 73, 924-935 (2015).
Systematic control of hole-injection barrier height with electron acceptors in [7] phenacene single-crystal field-effect transistors. The Journal of Physical Chemistry C 118, 5284 (2014).
Fabrication of single crystal field-effect transistors with phenacene-type molecules and their excellent transistor characteristics. Organic Electronics, 14, 1673 (2013).
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